B4C nanosheets decorated with in situ-derived boron-doped graphene quantum dots for high-efficiency ambient N2 fixation

Wei-Bin Qiu; Yu-Xi Luo; Ru-Ping Liang; Jian-Ding Qiu; Xing-Hua Xia

doi:10.1039/C9CC03413G

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B₄C nanosheets decorated with in situ-derived boron-doped graphene quantum dots for high-efficiency ambient N₂ fixation†

Wei-Bin Qiu,

^a Yu-Xi Luo,^a Ru-Ping Liang,*^a Jian-Ding Qiu

*^ab and Xing-Hua Xia

*^c

Author affiliations

* Corresponding authors

^a College of Chemistry, Nanchang University, Nanchang 330031, China
E-mail: rpliang@ncu.edu.cn, jdqiu@ncu.edu.cn

^b College of Materials and Chemical Engineering, Pingxiang University, Pingxiang 337055, China

^c State Key Laboratory of Analytical Chemistry for Life Science, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
E-mail: xhxia@nju.edu.cn

Abstract

In situ-derived boron-doped graphene quantum dots can significantly improve the activity of boron carbide nanosheets for artificial N₂ fixation and reduction with superior electrocatalytic activity (NH₃ yield: 28.6 μg h⁻¹ mg_cat.⁻¹ at −0.45 V vs. RHE; faradaic efficiency: 16.7%), high electrochemical stability, and high selectivity in 0.1 M HCl under ambient conditions.

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Article information

DOI: https://doi.org/10.1039/C9CC03413G
Article type: Communication
Submitted: 03 May 2019
Accepted: 31 May 2019
First published: 31 May 2019

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Chem. Commun., 2019,55, 7406-7409

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B₄C nanosheets decorated with in situ-derived boron-doped graphene quantum dots for high-efficiency ambient N₂ fixation

W. Qiu, Y. Luo, R. Liang, J. Qiu and X. Xia, Chem. Commun., 2019, 55, 7406 DOI: 10.1039/C9CC03413G

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