Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions

Shiqi Liu; Jingzhen Li; Bowen Shi; Xiuying Zhang; Yuanyuan Pan; Meng Ye; Ruge Quhe; Yangyang Wang; Han Zhang; Jiahuan Yan; Linqiang Xu; Ying Guo; Feng Pan; Jing Lu

doi:10.1039/C8TC90116C

Correction: Gate-tunable interfacial properties of in-plane ML MX₂ 1T′–2H heterojunctions

Shiqi Liu,^a Jingzhen Li,^a Bowen Shi,^a Xiuying Zhang,^a Yuanyuan Pan,^a Meng Ye,^a Ruge Quhe,^b Yangyang Wang,^ac Han Zhang,^a Jiahuan Yan,^a Linqiang Xu,^a Ying Guo,^d Feng Pan*^e and Jing Lu*^af

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* Corresponding authors

^a State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
E-mail: jinglu@pku.edu.cn

^b State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China

^c Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, P. R. China

^d School of Physics and Telecommunication Engineering, Shaanxi Sci-Tech University, Hanzhong 723001, P. R. China

^e School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, P. R. China
E-mail: panfeng@pkusz.edu.cn

^f Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

Abstract

Correction for ‘Gate-tunable interfacial properties of in-plane ML MX₂ 1T′–2H heterojunctions’ by Shiqi Liu et al., J. Mater. Chem. C, 2018, DOI: 10.1039/c8tc01106k.

Journal of Materials Chemistry C

Correction: Gate-tunable interfacial properties of in-plane ML MX₂ 1T′–2H heterojunctions

Abstract

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Correction: Gate-tunable interfacial properties of in-plane ML MX₂ 1T′–2H heterojunctions

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