Solution-processed silver sulphide nanocrystal film for resistive switching memories

Abstract

Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As an alternative to high temperature and vacuum-based physical sulphurization methods of silver (Ag), here we propose, as a resistive switching medium, a layer built from colloidal Ag_2−xS nanocrystals – compatible with solution-processed approaches. The effects of the electrode size (from macro- to micro-scale), composition (Ag, Ti and Pt) and geometry on the device performance together with the electrochemical mechanisms involved are evaluated. We achieved an optimized Ag/Ti bowtie proof-of-concept configuration by e-beam lithography, which fulfils the general requirements for ReRAM devices in terms of low power consumption and a reliable I_ON/I_OFF ratio. This configuration demonstrates reproducible switching between ON and OFF states with data endurance of at least 20 cycles; and an I_ON/I_OFF ratio up to 10³ at low power consumption (0.1 V read-out), which outperforms previous results in the literature for devices with resistive layers fabricated from silver chalcogenide nanoparticles.