Issue 28, 2018
From the journal:

Journal of Materials Chemistry C

Bright inverted quantum-dot light-emitting diodes by all-solution processing†

Manuel A. Triana, ORCID logo ‡*ab   Hao Chen,‡bc   Dandan Zhang,*bd   Rubén J. Camargo,a   Tianshu Zhai,d   Steffen Duhm ORCID logo d  and  Yajie Dong ORCID logo *bce  

* Corresponding authors

a Escuela de Ingeniería Química, Universidad del Valle, Ciudad Universitaria Meléndez, A. A. 25360, Cali, Colombia
E-mail: manuel.triana@correounivalle.edu.co

b Nanoscience Technology Center, University of Central Florida, Orlando, FL 32826, USA
E-mail: yajie.dong@ucf.edu

c College of Optics and Photonics, University of Central Florida, Orlando, FL, USA

d Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
E-mail: zhangdd@suda.edu.cn

e Department of Materials Science & Engineering, University of Central Florida, Orlando, FL, USA

Abstract

An inverted red quantum dot light-emitting diode (QLED) with peak brightness of 75 444 cd m−2 was achieved by all solution-processing, thanks to the enhanced coverage of uniform hydrophilic poly(ethylenedioxythiophene)/polystyrenesulfonate (PEDOT:PSS) hole injection layer (HIL) film on hydrophobic hole transport layer (HTL), which was enabled by doping PEDOT:PSS with non-ionic surfactant Triton X-100.

Graphical abstract: Bright inverted quantum-dot light-emitting diodes by all-solution processing

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Article information

DOI
https://doi.org/10.1039/C8TC02221F
Article type
Communication
Submitted
08 May 2018
Accepted
01 Jul 2018
First published
03 Jul 2018

J. Mater. Chem. C, 2018,6, 7487-7492

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Bright inverted quantum-dot light-emitting diodes by all-solution processing

M. A. Triana, H. Chen, D. Zhang, R. J. Camargo, T. Zhai, S. Duhm and Y. Dong, J. Mater. Chem. C, 2018, 6, 7487 DOI: 10.1039/C8TC02221F

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