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Issue 27, 2018
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Enhanced electrical properties of antimony doped tin oxide thin films deposited via aerosol assisted chemical vapour deposition

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Abstract

Transparent conducting oxides have widespread application in modern society but there is a need to move away from the current ‘industry champion’ tin doped indium oxide (In2O3:Sn) due to high costs. Antimony doped tin(IV) oxide (ATO) is an excellent candidate but is limited by its opto-electrical properties. Here, we present a novel and scalable synthetic route to ATO thin films that shows excellent electrical properties. Resistivity measurements showed that at 4 at% doping the lowest value of 4.7 × 10−4 Ω cm was achieved primarily due to a high charge carrier density of 1.2 × 1021 cm−3. Further doping induced an increase in resistivity due to a decrease in both the carrier density and mobility. Ab initio hybrid density functional theory (DFT) calculations show the thermodynamic basis for the tail off of performance beyond a certain doping level, and the appearance of Sb(III) within the doped thin films.

Graphical abstract: Enhanced electrical properties of antimony doped tin oxide thin films deposited via aerosol assisted chemical vapour deposition

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Supplementary files

Article information


Submitted
23 Apr 2018
Accepted
19 Jun 2018
First published
19 Jun 2018

This article is Open Access

J. Mater. Chem. C, 2018,6, 7257-7266
Article type
Paper

Enhanced electrical properties of antimony doped tin oxide thin films deposited via aerosol assisted chemical vapour deposition

S. D. Ponja, B. A. D. Williamson, S. Sathasivam, D. O. Scanlon, I. P. Parkin and C. J. Carmalt, J. Mater. Chem. C, 2018, 6, 7257
DOI: 10.1039/C8TC01929K

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