Issue 66, 2018, Issue in Progress

Mechanical exfoliation and electrical characterization of a one-dimensional Nb2Se9 atomic crystal

Abstract

A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb2Se9 flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb2Se9 flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb2Se9 flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices.

Graphical abstract: Mechanical exfoliation and electrical characterization of a one-dimensional Nb2Se9 atomic crystal

Supplementary files

Article information

Article type
Paper
Submitted
06 Sep 2018
Accepted
19 Oct 2018
First published
09 Nov 2018
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2018,8, 37724-37728

Mechanical exfoliation and electrical characterization of a one-dimensional Nb2Se9 atomic crystal

B. J. Kim, B. J. Jeong, S. Oh, S. Chae, K. H. Choi, T. Nasir, S. H. Lee, K. Kim, H. K. Lim, I. J. Choi, L. Chi, S. Hyun, H. K. Yu, J. Lee and J. Choi, RSC Adv., 2018, 8, 37724 DOI: 10.1039/C8RA07437B

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements