Issue 58, 2018, Issue in Progress

Strain-engineering the electronic properties and anisotropy of GeSe2 monolayers

Abstract

As a new two-dimensional (2D) material, GeSe2 has attracted significant attention recently due to its distinctive in-plane anisotropic properties originated from the in-plane anisotropic crystal structure, high air stability and excellent performance in polarization-sensitive photodetection. However, no systematic study of the strain effect on the electronic properties and anisotropy of GeSe2 has been reported, restricting the relevant applications such as mechanical-electronic devices. Here we investigate the change of the electronic properties and anisotropy of GeSe2 monolayer under strains along x and y directions through first-principle calculations. The electronic band structure and effective mass of charge carriers are highly sensitive to the strain. Notably, through appropriate x or y directional strain, the anisotropy of the hole effective mass can even be rotated by 90°. These plentiful strain-engineering properties of GeSe2 give it many opportunities in novel mechanical-electronic applications.

Graphical abstract: Strain-engineering the electronic properties and anisotropy of GeSe2 monolayers

Supplementary files

Article information

Article type
Paper
Submitted
06 Aug 2018
Accepted
05 Sep 2018
First published
28 Sep 2018
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2018,8, 33445-33450

Strain-engineering the electronic properties and anisotropy of GeSe2 monolayers

Z. Li, X. Wang, W. Shi, X. Xing, D. Xue and J. Hu, RSC Adv., 2018, 8, 33445 DOI: 10.1039/C8RA06606J

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