Issue 62, 2018, Issue in Progress

Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy

Abstract

We report the growth of a 3.5 mm-thick bulk GaN layer using a stress-engineered homoepitaxy method without any external processes. We employ a gradient V/III ratio during the growth, which enables a 3.5 mm-thick bulk GaN layer with a smooth surface and high crystal quality to be obtained. For a constant V/III ratio of 10, the bulk GaN layer has a flat surface; however, microcracks emerge in the GaN layer. For a constant V/III ratio of 38, the bulk GaN layer has a rough surface, without microcracks. On the other hand, by decreasing the V/III ratio from 38 to 10, the structural properties of the GaN layers are successfully controlled. The higher V/III ratio in the initial growth stage leads to a rough surface, and reduced stress and dislocation density in the bulk GaN layers, while the lower V/III ratio in the second stage of the growth provides an opposite trend, confirmed by Raman spectroscopy and X-ray measurements. We expect that this study will offer a new opportunity to achieve the growth of high-crystallinity bulk GaN without ex situ and complicated processes.

Graphical abstract: Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy

Article information

Article type
Paper
Submitted
31 Jul 2018
Accepted
11 Oct 2018
First published
17 Oct 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 35571-35574

Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy

M. Lee and S. Park, RSC Adv., 2018, 8, 35571 DOI: 10.1039/C8RA06438E

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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