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Issue 52, 2018, Issue in Progress
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Band offset and an ultra-fast response UV-VIS photodetector in γ-In2Se3/p-Si heterojunction heterostructures

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Abstract

High-quality γ-In2Se3 thin films and a γ-In2Se3/p-Si heterojunction were prepared using pulse laser deposition (PLD). The band offset of this heterojunction was studied by XPS and the band structure was found to be type II structure. The valence band offset (ΔEv) and the conduction band offset (ΔEc) of the heterojunction were determined to be 1.2 ± 0.1 eV and 0.27 ± 0.1 eV, respectively. The γ-In2Se3/p-Si heterojunction photodetector has high responsivity under UV to visible light illumination. The heterojunction exhibits highly stable photodetection characteristics with an ultrafast response/recovery time of 15/366 μs. The ultrafast response time was attributed to type II structure band alignment, which was good for the separation of electron–hole pairs and it can quickly reduce recombination. These excellent properties make γ-In2Se3/p-Si heterojunctions a promising candidate for photodetector applications.

Graphical abstract: Band offset and an ultra-fast response UV-VIS photodetector in γ-In2Se3/p-Si heterojunction heterostructures

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Publication details

The article was received on 03 Jul 2018, accepted on 13 Aug 2018 and first published on 21 Aug 2018


Article type: Paper
DOI: 10.1039/C8RA05677C
Citation: RSC Adv., 2018,8, 29555-29561
  • Open access: Creative Commons BY-NC license
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    Band offset and an ultra-fast response UV-VIS photodetector in γ-In2Se3/p-Si heterojunction heterostructures

    Y. X. Fang, H. Zhang, F. Azad, S. P. Wang, F. C. C. Ling and S. C. Su, RSC Adv., 2018, 8, 29555
    DOI: 10.1039/C8RA05677C

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