A simple method to improve the performance of perovskite light-emitting diodes via layer-by-layer spin-coating CsPbBr3 quantum dots

Bobo Li; Xiaomeng Li; Xia Li; Haolin Liu; Zhaonan Li; Guohong Xiang; Yuhan Liu; Taojie Zhou; Xuan Fang; Zhaoyu Zhang

doi:10.1039/C8RA05104F

A simple method to improve the performance of perovskite light-emitting diodes via layer-by-layer spin-coating CsPbBr₃ quantum dots†

Bobo Li,

‡^a Xiaomeng Li,‡^a Xia Li,^b Haolin Liu,^a Zhaonan Li,^a Guohong Xiang,^a Yuhan Liu,^a Taojie Zhou,^a Xuan Fang^a and Zhaoyu Zhang*^a

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* Corresponding authors

^a School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, P. R. China
E-mail: zhangzy@cuhk.edu.cn

^b State Key Laboratory of Inorganic Synthesis and Preparation Chemistry, College of Chemistry, Jilin University, Changchun, P. R. China

Abstract

Recently, all-inorganic halide perovskite quantum dots have become a very promising material for light-emitting diodes. Herein, we demonstrate a facile method, namely, layer-by-layer spin-coating of CsPbBr₃ QDs to improve device performance. After optimization of the number of emissive layers, the maximum EQE can be increased from an initial value of 0.69% to 2.31%. Additionally, we inserted a CBP layer between PEDOT:PSS and CsPbBr₃ multilayers to balance charge transportation and recombination. As a result, a 37% improvement in EQE (up to 3.16%) and highest luminance of 2629 cd m⁻² are obtained.

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A simple method to improve the performance of perovskite light-emitting diodes via layer-by-layer spin-coating CsPbBr₃ quantum dots†

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A simple method to improve the performance of perovskite light-emitting diodes via layer-by-layer spin-coating CsPbBr₃ quantum dots

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