Issue 42, 2018, Issue in Progress

Interconnecting semiconducting molecules with non-conjugated soft linkers: a way to improve film formation quality without sacrifice in charge mobility

Abstract

The formation of high quality homogeneous active component films is essential to the fabrication of many organic optoelectronic devices, especially those having a large area module. However, most small molecule (SM) semiconductors are unable to achieve such a goal via solution processing because their large and rigid π-conjugated structures generally drive them to aggregate or crystallize into inhomogeneous domains in the process. In this work, a SM semiconductor (SM-DPP6T) based on a diketopyrrolopyrrole (DPP) center with three thiophene units on both sides encounters the same problem. However, when its molecules are interconnected with soft alkyl linkers and change into a poly(rod-coil) polymer, PRC-DPP6T, the problem is solved. Compared with SM-DPP6T, PRC-DPP6T can form a high quality homogeneous film with much better uniformity and coverage on silicon wafers by spin-coating. Moreover, the so-prepared PRC-DPP6T field-effect transistors displayed a much narrower performance distribution and comparable mobility when compared with those based on SM-DPP6T (0.17 vs. 0.15 cm2 V−1 s−1). These results demonstrate that the interconnection of SM semiconductor molecules with soft non-conjugated linkers is a promising way to improve film formation quality while keeping mobility intact.

Graphical abstract: Interconnecting semiconducting molecules with non-conjugated soft linkers: a way to improve film formation quality without sacrifice in charge mobility

Supplementary files

Article information

Article type
Paper
Submitted
23 May 2018
Accepted
21 Jun 2018
First published
28 Jun 2018
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2018,8, 23546-23554

Interconnecting semiconducting molecules with non-conjugated soft linkers: a way to improve film formation quality without sacrifice in charge mobility

W. Xiao, J. Wang, H. Li, L. Liang, X. Xiang, X. Chen, J. Li, Z. Lu and W. Li, RSC Adv., 2018, 8, 23546 DOI: 10.1039/C8RA04405H

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