Issue 50, 2018

Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

Abstract

A heterojunction of n-ZnO nanowire (NW)/p-B-doped diamond (BDD) was fabricated. The rectifying behavior was observed with the turn on voltage of a low value (0.8 V). The forward current at 5 V is 12 times higher than that of a larger diameter n-ZnO nanorod (NR)/p-BDD heterojunction. The electrical transport behaviors for the comparison of n-ZnO NWs/p-BDD and n-ZnO NRs/p-BDD heterojunctions are investigated over various bias voltages. The carrier injection process mechanism for ZnO NWs/BDD is analyzed on the basis of the proposed equilibrium energy band diagrams. The ZnO NWs/BDD heterojunction displays improved IV characteristics and relatively high performance for the electrical transport properties.

Graphical abstract: Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

Article information

Article type
Paper
Submitted
25 Apr 2018
Accepted
08 Aug 2018
First published
13 Aug 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 28804-28809

Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

D. Sang, Q. Wang, Q. Wang, D. Zhang, H. Hu, W. Wang, B. Zhang, Q. Fan and H. Li, RSC Adv., 2018, 8, 28804 DOI: 10.1039/C8RA03546F

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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