Enhanced efficiency of Cu2ZnSn(S,Se)4 solar cells via anti-reflectance properties and surface passivation by atomic layer deposited aluminum oxide

Abstract

Reducing interface recombination losses is one of the major challenges in developing Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cells. Here, we propose a CZTSSe solar cell with an atomic layer deposited Al₂O₃ thin film for surface passivation. The influence of passivation layer thickness on the power conversion efficiency (PCE), short-circuit current density (J_sc), open-circuit voltage (V_oc) and fill factor (FF) of the solar cell is systematically investigated. It is found that the Al₂O₃ film presents notable antireflection (AR) properties over a broad range of wavelengths (350–1000 nm) for CZTSSe solar cells. With increasing Al₂O₃ thickness (1–10 nm), the average reflectance of the CZTSSe film decreases from 12.9% to 9.6%, compared with the average reflectance of 13.6% for the CZTSSe film without Al₂O₃. The Al₂O₃ passivation layer also contributes to suppressed surface recombination and enhanced carrier separation. Passivation performance is related to chemical and field effect passivation, which is due to released H atoms from the Al–OH bonds and the formation of Al vacancies and O interstitials within Al₂O₃ films. Therefore, the J_sc and V_oc of the CZTSSe solar cell with 2 nm-Al₂O₃ were increased by 37.8% and 57.8%, respectively, in comparison with those of the unpassivated sample. An optimal CZTSSe solar cell was obtained with a V_oc, J_sc and η of 0.361 V, 33.78 mA and 5.66%. Our results indicate that Al₂O₃ films show the dual functions of AR and surface passivation for photovoltaic applications.