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Issue 40, 2018, Issue in Progress
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Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD

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Abstract

Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η5-C5H4Se)2Ti(η5-C5H5)2]2 (1). Samples were heated at 1000 °C for 1–18 h and cooled to room temperature following two different protocols, which promoted the formation of different phases. The resulting films were analyzed by grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) and UV/vis spectroscopy. An investigation of the Fe doping limit from a parallel pyrolysis study of FexTiSe2 powders produced in situ during LPCVD depositions has shown an increase in the Fe–TiSe2–Fe layer width with Fe at% increase. Powders were analyzed using powder X-ray diffraction (PXRD) involving Rietveld refinement and XPS. UV/vis measurements of the semiconducting thin films show a shift in band gap with iron doping from 0.1 eV (TiSe2) to 1.46 eV (Fe0.46TiSe2).

Graphical abstract: Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD

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Publication details

The article was received on 13 Apr 2018, accepted on 12 Jun 2018 and first published on 20 Jun 2018


Article type: Paper
DOI: 10.1039/C8RA03174F
Citation: RSC Adv., 2018,8, 22552-22558
  • Open access: Creative Commons BY license
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    Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD

    C. Sanchez-Perez, C. E. Knapp, R. H. Colman, C. Sotelo-Vazquez, R. Oilunkaniemi, R. S. Laitinen and C. J. Carmalt, RSC Adv., 2018, 8, 22552
    DOI: 10.1039/C8RA03174F

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