Issue 28, 2018

Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

Abstract

We propose a tunnel-injection structure, in which WS2 quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state and time-resolved photoluminescence (PL). A simultaneous enhancement of the PL intensity and PL decay time for the InGaN QW were observed after transfer of charge carriers from the WS2-QD injector to the InGaN-QW emitter. The tunneling time has been extracted from the time-resolved PL, which increases as the barrier thickness is increased. The dependence of the tunneling time on the barrier thickness is in good agreement with the prediction of the semiclassical Wentzel–Kramers–Brillouin model, confirming the mechanism of the tunnel injection between WS2 QDs and InGaN QWs.

Graphical abstract: Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

Associated articles

Article information

Article type
Paper
Submitted
07 Dec 2017
Accepted
20 Mar 2018
First published
24 Apr 2018
This article is Open Access
Creative Commons BY license

RSC Adv., 2018,8, 15399-15404

Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

S. R. M. Santiago, S. P. Caigas, T. Lin, C. Yuan, J. Shen, C. Chiu and H. Kuo, RSC Adv., 2018, 8, 15399 DOI: 10.1039/C7RA13108A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements