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Prediction of high-temperature Chern insulator with half-metallic edge states in asymmetry-functionalized stanene

Abstract

A great obstacle for practical applications of quantum anomalous Hall (QAH) effect is the lack of suitable two-dimensional (2D) materials with a sizable nontrivial band gap, high Curie temperature, and high carrier mobility. Based on ab initio calculations, here we propose the realizations of these intriguing properties in asymmetry-functionalized 2D SnHN and SnOH lattices. Spin-polarized band structures reveal that SnOH monolayer exhibits spin gapless semiconductor (SGS) feature, while SnNH can become SGS under compressive strain. The Curie temperature of SnOH reaches up to 266 K predicted by Monte Carlo simulation, comparable to the room temperature. When the spin and orbital degrees of freedom are allowed to couple, they become Chern insulators with sizable large gaps and fully spin-polarized half-metallic edges states with higher Fermi velocity of 4.9 × 105 m s−1. These results pave a new way for designing the topological field transistor in group-IV honeycomb lattice.

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Publication details

The article was received on 14 Sep 2018, accepted on 10 Oct 2018 and first published on 10 Oct 2018


Article type: Paper
DOI: 10.1039/C8NR07503D
Citation: Nanoscale, 2018, Accepted Manuscript
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    Prediction of high-temperature Chern insulator with half-metallic edge states in asymmetry-functionalized stanene

    M. Zhang, C. Zhang, P. Wang and S. Li, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR07503D

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