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Issue 43, 2018
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Prediction of high-temperature Chern insulator with half-metallic edge states in asymmetry-functionalized stanene

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Abstract

A great obstacle for the practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable two-dimensional (2D) materials with a sizable nontrivial band gap, high Curie temperature, and high carrier mobility. Based on first-principles calculations, here, we propose the realizations of these intriguing properties in asymmetry-functionalized 2D SnHN and SnOH lattices. Spin-polarized band structures reveal that SnOH monolayer exhibits a spin gapless semiconductor (SGS) feature, whereas SnNH is converted to SGS under compressive strain. The Curie temperature of SnOH reaches 266 K, as predicted by Monte Carlo simulation, and it is comparable to the room temperature. When the spin and orbital degrees of freedom are allowed to couple, both systems become large-gap QAH insulators with fully spin-polarized half-metallic edge states and higher Fermi velocity of 4.9 × 105 m s−1. These results pave a new way for designing topological field transistors in group-IV honeycomb lattices.

Graphical abstract: Prediction of high-temperature Chern insulator with half-metallic edge states in asymmetry-functionalized stanene

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Publication details

The article was received on 14 Sep 2018, accepted on 10 Oct 2018 and first published on 10 Oct 2018


Article type: Paper
DOI: 10.1039/C8NR07503D
Citation: Nanoscale, 2018,10, 20226-20233

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    Prediction of high-temperature Chern insulator with half-metallic edge states in asymmetry-functionalized stanene

    M. Zhang, C. Zhang, P. Wang and S. Li, Nanoscale, 2018, 10, 20226
    DOI: 10.1039/C8NR07503D

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