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Issue 43, 2018
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Photovoltaic effect in a few-layer ReS2/WSe2 heterostructure

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Two-dimensional transition-metal dichalcogenides (TMDCs) are notable materials owing to their flexibility, transparency, and appropriate bandgaps. Because of their unique advantages, TMDC p–n diodes have been studied for next-generation electronics and optoelectronics. However, their efficiency must be increased for commercialization. In this study, we demonstrated a heterostructure composed of few-layer ReS2 and WSe2. This few-layer ReS2/WSe2 heterostructure exhibits a p–n junction and an n–n junction in different gate-bias regimes. In the p–n junction regime, the heterostructure shows outstanding rectification behavior. Additionally, we identify three carrier-transfer mechanisms − direct tunneling, Fowler–Nordheim tunneling, and the space charge region − depending on the drain bias. Furthermore, the photovoltaic effect is observed in this few-layer ReS2/WSe2 heterostructure. As a result, a high fill factor (≈ 0.56), power conversion (≈ 1.5%), and external quantum efficiency (≈ 15.3%) were obtained. This study provides new guidelines for flexible optoelectronic devices.

Graphical abstract: Photovoltaic effect in a few-layer ReS2/WSe2 heterostructure

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Publication details

The article was received on 05 Sep 2018, accepted on 08 Oct 2018 and first published on 09 Oct 2018

Article type: Paper
DOI: 10.1039/C8NR07219A
Citation: Nanoscale, 2018,10, 20306-20312

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    Photovoltaic effect in a few-layer ReS2/WSe2 heterostructure

    C. Park, N. T. Duong, S. Bang, D. A. Nguyen, H. M. Oh and M. S. Jeong, Nanoscale, 2018, 10, 20306
    DOI: 10.1039/C8NR07219A

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