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Issue 37, 2018
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Ambipolar remote graphene doping by low-energy electron beam irradiation

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Abstract

We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved.

Graphical abstract: Ambipolar remote graphene doping by low-energy electron beam irradiation

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Publication details

The article was received on 11 Aug 2018, accepted on 27 Aug 2018 and first published on 28 Aug 2018


Article type: Communication
DOI: 10.1039/C8NR06483K
Citation: Nanoscale, 2018,10, 17520-17524
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    Ambipolar remote graphene doping by low-energy electron beam irradiation

    V. Stará, P. Procházka, D. Mareček, T. Šikola and J. Čechal, Nanoscale, 2018, 10, 17520
    DOI: 10.1039/C8NR06483K

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