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Issue 40, 2018
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Linear heterostructured Ni2Si/Si nanowires with abrupt interfaces synthesised in solution

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Abstract

Herein, we report a novel approach to form axial heterostructure nanowires composed of linearly distinct Ni silicide (Ni2Si) and Si segments via a one-pot solution synthesis method. Initially, Si nanowires are grown using Au seeds deposited on a Ni substrate with the Si delivery in the solution phase using a liquid phenylsilane precursor. Ni silicide then forms axially along the wires through progressive Ni diffusion from the growth substrate, with a distinct transition between the silicide and pure Si segments. The interfacial abruptness and chemical composition of the heterostructure nanowires was analysed through transmission electron microscopy, electron diffraction, energy dispersive X-ray spectroscopy, aberration corrected scanning transmission electron microscopy and atomically resolved electron energy loss spectroscopy. The method represents a versatile approach for the formation of complex axial NW heterostructures and could be extended to other metal silicide or analogous metal germanide systems.

Graphical abstract: Linear heterostructured Ni2Si/Si nanowires with abrupt interfaces synthesised in solution

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Publication details

The article was received on 04 Jul 2018, accepted on 29 Sep 2018 and first published on 01 Oct 2018


Article type: Paper
DOI: 10.1039/C8NR05388J
Citation: Nanoscale, 2018,10, 19182-19187
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    Linear heterostructured Ni2Si/Si nanowires with abrupt interfaces synthesised in solution

    M. Sheehan, Q. M. Ramasse, H. Geaney and K. M. Ryan, Nanoscale, 2018, 10, 19182
    DOI: 10.1039/C8NR05388J

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