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The formation of a functional pentacene/CH3NH3PbI3−xClx perovskite interface: optical gating and field-induced charge retention

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Abstract

We fabricated a functional pentacene/CH3NH3PbI3−xClx perovskite interface where optical gating and field assisted charge retention occur. Using a pentacene/perovskite field effect transistor (FET) test platform, we investigated the interfacial charge transfer associated with optical gating through threshold voltage measurements under illumination. Importantly, bistable electrical conduction in pentacene/perovskite FET devices was achieved as a result of field-induced charge retention at the interface and the origin is discussed to be associated with interfacial charging at the pentacene/perovskite interface. Interfacial contact modification associated with ion migration and other possible effects in the perovskite layer plays a crucial role in forming a functional interface involving organic semiconducting materials.

Graphical abstract: The formation of a functional pentacene/CH3NH3PbI3−xClx perovskite interface: optical gating and field-induced charge retention

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Publication details

The article was received on 03 Jul 2018, accepted on 18 Sep 2018 and first published on 21 Sep 2018


Article type: Paper
DOI: 10.1039/C8NR05344H
Citation: Nanoscale, 2018, Advance Article
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    The formation of a functional pentacene/CH3NH3PbI3−xClx perovskite interface: optical gating and field-induced charge retention

    Y. Kim, J. Kim, H. Ko and B. Park, Nanoscale, 2018, Advance Article , DOI: 10.1039/C8NR05344H

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