Issue 40, 2018

The impact of substrate surface defects on the properties of two-dimensional van der Waals heterostructures

Abstract

The recent emergence of vertically stacked van der Waals (vdW) heterostructures provides new opportunities for these materials to be employed in a wide range of novel applications. Understanding the interlayer coupling in the stacking geometries of the heterostructures and its effect on the resultant material properties is particularly important for obtaining materials with desirable properties. Here, we report that the atomic bonding between stacked layers and thereby the interlayer properties of the vdW heterostructures can be well tuned by the substrate surface defects using WS2 flakes directly grown on graphene. We show that the defects of graphene have no significant effect on the crystal structure or the quality of the grown WS2 flakes; however, they have a strong influence on the interlayer interactions between stacked layers, thus affecting the layer deformability, thermal stability, and physical and electrical properties. Our experimental and computational investigations also reveal that WS2 flakes grown on graphene defects form covalent bonds with the underlying graphene via W atomic bridges (i.e., formation of larger overlapping hybrid orbitals), enabling these flakes to exhibit different intrinsic properties, such as higher conductivity and improved contact characteristics than heterostructures that have vdW interactions with graphene. This result emphasizes the importance of understanding the interlayer coupling in the stacking geometries and its correlation effect for designing desirable properties.

Graphical abstract: The impact of substrate surface defects on the properties of two-dimensional van der Waals heterostructures

Supplementary files

Article information

Article type
Paper
Submitted
10 May 2018
Accepted
17 Sep 2018
First published
18 Sep 2018

Nanoscale, 2018,10, 19212-19219

The impact of substrate surface defects on the properties of two-dimensional van der Waals heterostructures

S. Kim, J. H. Kim, S. Lee, J. Kwak, Y. Jo, E. Yoon, G. Lee, Z. Lee and S. Kwon, Nanoscale, 2018, 10, 19212 DOI: 10.1039/C8NR03777A

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