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Issue 26, 2018
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Hexacene generated on passivated silicon

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On-surface synthesis represents a successful strategy to obtain designed molecular structures on an ultra-clean metal substrate. While metal surfaces are known to favor adsorption, diffusion, and chemical bonding between molecular groups, on-surface synthesis on non-metallic substrates would allow the electrical decoupling of the resulting molecule from the surface, favoring application to electronics and spintronics. Here, we demonstrate the on-surface generation of hexacene by surface-assisted reduction on a H-passivated Si(001) surface. The reaction, observed by scanning tunneling microscopy and spectroscopy, is probably driven by the formation of Si–O complexes at dangling bond defects. Supported by density functional theory calculations, we investigate the interaction of hexacene with the passivated silicon surface, and with single silicon dangling bonds.

Graphical abstract: Hexacene generated on passivated silicon

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The article was received on 26 Apr 2018, accepted on 01 Jun 2018 and first published on 25 Jun 2018

Article type: Paper
DOI: 10.1039/C8NR03422B
Citation: Nanoscale, 2018,10, 12582-12587

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    Hexacene generated on passivated silicon

    F. Eisenhut, J. Krüger, D. Skidin, S. Nikipar, J. M. Alonso, E. Guitián, D. Pérez, D. A. Ryndyk, D. Peña, F. Moresco and G. Cuniberti, Nanoscale, 2018, 10, 12582
    DOI: 10.1039/C8NR03422B

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