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Issue 47, 2018
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Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(II) complexes as precursors for AACVD

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Abstract

Selenium and sulfur derivatives of lead(II) acylchalcogourato complexes have been used to deposit PbSxSe1−x thin films by AACVD. By variation of the mole ratio of sulfur and selenium precursors in the aerosol feed solution the full range of compositions of PbSxSe1−x was obtained, i.e. 0 ≥ x ≥ 1. The films showed no contaminant phases demonstrating the potential for acylchalcogourato metal complexes as precursors for metal chalcogenide thin films. The crystal structure for bis[N,N-diethyl-N′-2-naphthoylthioureato]lead(II) was solved and displayed the expected decreases in Pb–E bond lengths from the previously reported selenium variant.

Graphical abstract: Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD

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Publication details

The article was received on 23 Aug 2018, accepted on 26 Sep 2018 and first published on 16 Nov 2018


Article type: Paper
DOI: 10.1039/C8DT03443E
Citation: Dalton Trans., 2018,47, 16938-16943
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    Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(II) complexes as precursors for AACVD

    T. E. Ezenwa, P. D. McNaughter, J. Raftery, D. J. Lewis and P. O'Brien, Dalton Trans., 2018, 47, 16938
    DOI: 10.1039/C8DT03443E

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