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Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films

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Abstract

The cubic phase of pure zirconia (ZrO2) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition. Here, we show that the cubic crystals present at the film/substrate interface near-region exhibit fast ionic transport, which is superior to what is obtained with similar yttrium-stabilized cubic zirconia thin films.

Graphical abstract: Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films

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Publication details

The article was received on 29 Aug 2018, accepted on 04 Oct 2018 and first published on 04 Oct 2018


Article type: Communication
DOI: 10.1039/C8CP05465G
Citation: Phys. Chem. Chem. Phys., 2018, Advance Article
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    Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films

    M. Raza, S. Sanna, L. dos Santos Gómez, E. Gautron, A. A. El Mel, N. Pryds, R. Snyders, S. Konstantinidis and V. Esposito, Phys. Chem. Chem. Phys., 2018, Advance Article , DOI: 10.1039/C8CP05465G

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