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Van der Waals interaction-induced photoluminescence weakening and multilayer growth in epitaxially aligned WS2

Abstract

Recently, transition metal dichalcogenides (TMDCs) have attracted great interest due to their unique electronic and optical properties. Chemical vapor deposition (CVD) has been regarded as the most promissing method to synthesize large-area TMDCs with high reproducibility. Having similar hexagonal crystal structure with many TMDCs, c-plane sapphire is commonly utilized as a growth substrate in the CVD growth. However, few studies have been reported on the influence of sapphire substrate on growth behavior and physical properties of TMDCs. In this work, we demonstrate that higher strain is induced in the epitaxially grown WS2 grains via van der Waals interaction with sapphire as compared with misaligned WS2 grains. In addition, this strain was found to enahnce overlayer deposition on monolayer WS2, while multilayer growth was not observed in the non-epitaxial WS2. Photoluminescence (PL) of the epitaxially grown WS2 grains was reduced reflecting effective van der Waals interaction with sapphire. Moreover, low-temperature PL meausrement revealed strong influence of the c-plane sapphire surface on the optical property of WS2. Our work offers a new insight in the understanding of the influence of substrate on the CVD-grown TMDC materials.

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Publication details

The article was received on 12 Jul 2018, accepted on 07 Nov 2018 and first published on 07 Nov 2018


Article type: Paper
DOI: 10.1039/C8CP04418J
Citation: Phys. Chem. Chem. Phys., 2018, Accepted Manuscript
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    Van der Waals interaction-induced photoluminescence weakening and multilayer growth in epitaxially aligned WS2

    H. G. Ji, M. Maruyama, A. S. Aji, S. Okada, K. Matsuda and H. Ago, Phys. Chem. Chem. Phys., 2018, Accepted Manuscript , DOI: 10.1039/C8CP04418J

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