Jump to main content
Jump to site search

Issue 31, 2018
Previous Article Next Article

Overwhelming coexistence of negative differential resistance effect and RRAM

Author affiliations

Abstract

An electronic cell that possesses synchronously multi-physical properties is of great importance in the applications of multifunctional electronic devices. In this study, an overwhelming coexistence of negative differential resistance (NDR) effect and resistive switching (RS) memory behavior at room temperature was observed based on Ag/Cu2ZnSnSe4 (CZTSe)/Mo devices. The long retention time of ∼104 s and high HRS/LRS resistance ratio of ∼215 can be achieved, indicating that our devices possess excellent resistance random access memory (RRAM). Moreover, strong NDR behavior was observed at room temperature, which provides a great potential application in advanced electronic devices. Finally, the combined physical model of conductive filament and Schottky barrier reinstallment is demonstrated to explain the coexistence phenomenon. Thus, in this, study we propose a new strategy for preparing a multifunctional electronic device with multiple physical attributes in the future.

Graphical abstract: Overwhelming coexistence of negative differential resistance effect and RRAM

Back to tab navigation

Supplementary files

Publication details

The article was received on 02 Jun 2018, accepted on 13 Jul 2018 and first published on 14 Jul 2018


Article type: Paper
DOI: 10.1039/C8CP03492C
Citation: Phys. Chem. Chem. Phys., 2018,20, 20635-20640
  •   Request permissions

    Overwhelming coexistence of negative differential resistance effect and RRAM

    T. Guo, B. Sun, Y. Zhou, H. Zhao, M. Lei and Y. Zhao, Phys. Chem. Chem. Phys., 2018, 20, 20635
    DOI: 10.1039/C8CP03492C

Search articles by author

Spotlight

Advertisements