Issue 47, 2018

Realizing high thermoelectric performance in Te nanocomposite through Sb2Te3 incorporation

Abstract

The rational design and fabrication of nanostructures has become a fashionable strategy for pursing high thermoelectric performance in solid-state materials. Here we report nanostructured Te–Sb2Te3 composites with significantly enhanced thermoelectric performance through a scalable bottom-up method followed by a rapid sintering process. The power factor along with the carrier concentration could be significantly enhanced by increasing the number of point defects of Image ID:c8ce01539b-t1.gif. Meanwhile, a great number of boundaries and hetero-interfaces between the Te and Sb2Te3 nanoparticles could play an important role in blocking phonons, resulting in the evident suppression of lattice thermal conductivity. Ultimately, a highest zT value close to 1.0 could be achieved at 623 K in samples with components of 2.6 mol% Sb2Te3 and 97.4 mol% Te. Such a peak zT value is comparable to that of doped Te materials synthesized by the conventional solid-state reaction process. This work reveals that high thermoelectric performance could be realized in an intentionally designed nanocomposite by synergistically improving the power factor and suppressing the lattice thermal conductivity.

Graphical abstract: Realizing high thermoelectric performance in Te nanocomposite through Sb2Te3 incorporation

Supplementary files

Article information

Article type
Paper
Submitted
10 Sep 2018
Accepted
06 Nov 2018
First published
20 Nov 2018

CrystEngComm, 2018,20, 7729-7738

Realizing high thermoelectric performance in Te nanocomposite through Sb2Te3 incorporation

H. Q. Yang, Y. J. Chen, X. Y. Wang, L. Miao, X. Y. Li, X. D. Han, X. Lu, G. Y. Wang and X. Y. Zhou, CrystEngComm, 2018, 20, 7729 DOI: 10.1039/C8CE01539B

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements