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Single-crystal GaN layer converted from β-Ga2O3 films and its application for free-standing GaN

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Abstract

We have successfully obtained a hexagonal single crystal GaN layer with (002) orientation by nitridating β-Ga2O3 film under NH3 flow despite structural mismatch between β-Ga2O3 and hexagonal GaN. The conversion process of β-Ga2O3 to GaN has also been systematically investigated. The nitridated GaN layer shows a network structure without significant stress, which makes it very suitable to be used as a template for the epitaxial growth of high-quality GaN films. The GaN/Ga2O3 heterostructure can also be used to obtain free-standing GaN (FS-GaN) films by self-separation or chemical lift-off (CLO) process due to the selective etching of β-Ga2O3. Further investigation demonstrates the feasibility of the in situ growth of low-stress FS-GaN substrates by halide vapor phase epitaxy (HVPE).

Graphical abstract: Single-crystal GaN layer converted from β-Ga2O3 films and its application for free-standing GaN

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Publication details

The article was received on 09 Aug 2018, accepted on 27 Nov 2018 and first published on 28 Nov 2018


Article type: Paper
DOI: 10.1039/C8CE01336E
Citation: CrystEngComm, 2019, Advance Article
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    Single-crystal GaN layer converted from β-Ga2O3 films and its application for free-standing GaN

    Y. Li, X. Xiu, Z. Xiong, X. Hua, Z. Xie, P. Chen, B. Liu, T. Tao, R. Zhang and Y. Zheng, CrystEngComm, 2019, Advance Article , DOI: 10.1039/C8CE01336E

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