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Isovalent bismuth ions induced growth of highly-disperse Sb2S3 nanorods and their composite with p-CuSCN for self-powered photodetectors

Abstract

Stibnite (Sb2S3) is a promising material in photoelectronic and energy devices, but frequently exhibits sheaf-like and alike hierarchical structures that consist of secondary nanorods (NRs) or nanowires (NWs) because of its spatially fractal splitting growth habit. Foreign ions or seeds enable the alteration of growth dynamics and the consequent shape engineering of nanocrystals. We here report that the introduction of trace amount of isovalent Bi3+ ions (typically 1~2 atom% Bi/Sb) is efficient to synthesize highly disperse, uniform Sb2S3 NRs with reduced diameters and lengths. Two temperature-dependent growth mechanisms stemming from the presence of Bi ions, the fully splitting growth at high temperature and the seeded growth at low temperature, are proposed to demonstrate the formation of separated, thinner NRs. Meanwhile, the surfactant removal and the couple with p-type CuSCN were simultaneously performed on these Sb2S3 NRs, and the resultant CuSCN/Sb2S3 composite, which contains a large amount of point-to-surface contacted p-n heterojunctions with a suitable band allignment, exhibits promise in self-powered UV-visible photodetectors via the photovoltaic effect.

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Publication details

The article was received on 24 Jul 2018, accepted on 26 Nov 2018 and first published on 27 Nov 2018


Article type: Paper
DOI: 10.1039/C8CE01228H
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Isovalent bismuth ions induced growth of highly-disperse Sb2S3 nanorods and their composite with p-CuSCN for self-powered photodetectors

    J. Wang, Y. Qiao, T. Wang, H. Yu, Y. Feng and J. Zhang, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE01228H

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