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Issue 33, 2018
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CVD growth of molybdenum diselenide surface structures with tailored morphology

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Abstract

Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm. Utilizing tetrapotassium perylene-3,4,9,10-tetracarboxylate (PTAS) as a seed promoter and varying the vertical distance between the substrate and the precursor MoO3, different morphologies of MoSe2 were achieved, including 2D triangles, hexagons, 3D pyramids and vertically aligned MoSe2 sheets. We find that the shape of MoSe2 is highly dependent upon the distance h between the substrate and the precursor. The change in the morphology is attributed to the confinement of vapor (MoO3 and Se) precursors and their concentrations due to the change in h. These results are helpful in improving our understanding about the factors which influence the morphology (shape evolution) and also the continuous growth of MoSe2 films.

Graphical abstract: CVD growth of molybdenum diselenide surface structures with tailored morphology

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Publication details

The article was received on 02 Jun 2018, accepted on 26 Jul 2018 and first published on 26 Jul 2018


Article type: Paper
DOI: 10.1039/C8CE00917A
Citation: CrystEngComm, 2018,20, 4867-4874
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    CVD growth of molybdenum diselenide surface structures with tailored morphology

    M. N. Sial, M. Usman, B. Zheng, Y. Yu, A. Mavrič, F. Qing, M. Valant and Z. M. Wang, CrystEngComm, 2018, 20, 4867
    DOI: 10.1039/C8CE00917A

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