Issue 99, 2018
From the journal:

Chemical Communications

Wurtzite CoO: a direct band gap oxide suitable for a photovoltaic absorber†

Y. Wang, ORCID logo *ab   H. X. Ge, ORCID logo c   Y. P. Chen, ORCID logo c   X. Y. Meng, ORCID logo d   J. Ghanbaja, ORCID logo b   D. Horwat ORCID logo b  and  J. F. Pierson ORCID logo b  

* Corresponding authors

a State Key Laboratory for Environmental-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
E-mail: wangyongvlsi@hotmail.com

b Institut Jean Lamour, UMR 7198-CNRS, Université de Lorraine, Nancy 54011, France

c School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China

d Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, Tsukuba 305-0047, Japan

Abstract

A direct band gap of 1.6 eV has been identified in wurtzite CoO thin films, which matches the required value to achieve a theoretically high conversion efficiency solar cell. Its p-type conduction has been determined and an intense sub-gap absorption between 0.7 and 1.1 eV has been observed.

Graphical abstract: Wurtzite CoO: a direct band gap oxide suitable for a photovoltaic absorber

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Article information

DOI
https://doi.org/10.1039/C8CC06777E
Article type
Communication
Submitted
21 Aug 2018
Accepted
14 Nov 2018
First published
20 Nov 2018

Chem. Commun., 2018,54, 13949-13952

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Wurtzite CoO: a direct band gap oxide suitable for a photovoltaic absorber

Y. Wang, H. X. Ge, Y. P. Chen, X. Y. Meng, J. Ghanbaja, D. Horwat and J. F. Pierson, Chem. Commun., 2018, 54, 13949 DOI: 10.1039/C8CC06777E

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