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Issue 8, 2017
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High performance solution-crystallized thin-film transistors based on V-shaped thieno[3,2-f:4,5-f′]bis[1]benzothiophene semiconductors

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Abstract

A new class of solution-processable thieno[3,2-f:4,5-f′]bis[1]benzothiophene (TBBT-V) semiconductors are investigated. Semiconductors with decyl substituents and two kinds of π-extended decylthienyl substituents are facially derivatized from functionalized dibromo-substituted TBBT-Vvia either a Negishi or a Stille cross coupling procedure. The solubilities of TBBT-V semiconductors are somewhat higher than those of their previously developed dinaphtho[2,3-b:2′,3′-d]thiophene (DNT-V) counterparts. Single crystal analysis together with a calculation study on the transfer integral and the band structure in decyl-substituted TBBT-V (C10-TBBT-V) clarifies that these semiconductors form two-dimensionally ordered herringbone packing structures and the effective mass in the columnar direction rivals that of the previously developed decyl-substituted DNT-V. The carrier mobilities of TBBT-V derivatives in solution grown into single-crystalline films are remarkable (up to 6.2 cm2 V−1 s−1). Furthermore, their operation voltages are apparently lower than those of previously developed DNT-V derivatives due to the optimized ionization potential of the TBBT-V core and further π-extension by substitution of the thienyl groups.

Graphical abstract: High performance solution-crystallized thin-film transistors based on V-shaped thieno[3,2-f:4,5-f′]bis[1]benzothiophene semiconductors

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Supplementary files

Article information


Submitted
01 Nov 2016
Accepted
20 Jan 2017
First published
10 Feb 2017

J. Mater. Chem. C, 2017,5, 1903-1909
Article type
Paper

High performance solution-crystallized thin-film transistors based on V-shaped thieno[3,2-f:4,5-f′]bis[1]benzothiophene semiconductors

C. Mitsui, H. Tsuyama, R. Shikata, Y. Murata, H. Kuniyasu, M. Yamagishi, H. Ishii, A. Yamamoto, Y. Hirose, M. Yano, T. Takehara, T. Suzuki, H. Sato, A. Yamano, E. Fukuzaki, T. Watanabe, Y. Usami, J. Takeya and T. Okamoto, J. Mater. Chem. C, 2017, 5, 1903
DOI: 10.1039/C6TC04721A

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