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Issue 6, 2017
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Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

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Abstract

We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green's function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.

Graphical abstract: Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

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Publication details

The article was received on 12 Oct 2016, accepted on 10 Nov 2016 and first published on 24 Jan 2017


Article type: Paper
DOI: 10.1039/C6TC04429H
J. Mater. Chem. C, 2017,5, 1409-1413

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    Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

    E. Montes and U. Schwingenschlögl, J. Mater. Chem. C, 2017, 5, 1409
    DOI: 10.1039/C6TC04429H

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