Issue 8, 2017, Issue in Progress
From the journal:

RSC Advances

Correction: Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

Xue-feng She,ab   Jingsong Wang,a   Qingguo Xuea  and  Wentao Xu*bc  

* Corresponding authors

a State Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing (USTB), Beijing 100083, China

b Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyungbuk 790-784, Republic of Korea
E-mail: wentao@postech.ac.kr

c Department of Chemical Engineering, Stanford University, Stanford, CA 94305, USA

Abstract

Correction for ‘Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors’ by Xue-feng She et al., RSC Adv., 2016, 6, 114593–114598.

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Article information

DOI
https://doi.org/10.1039/C7RA90001E
Article type
Correction
Submitted
03 Jan 2017
Accepted
03 Jan 2017
First published
10 Jan 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 4645-4645

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Correction: Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors

X. She, J. Wang, Q. Xue and W. Xu, RSC Adv., 2017, 7, 4645 DOI: 10.1039/C7RA90001E

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