Effects of GaxZn1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes
Abstract
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* Corresponding authors
a
Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
E-mail:
yuchunyan75@163.com
b Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, China
A graphical abstract is available for this content
R. Li, C. Yu, H. Dong, W. Jia, T. Li, Z. Zhang and B. Xu, RSC Adv., 2017, 7, 49613 DOI: 10.1039/C7RA09250D
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