Issue 78, 2017, Issue in Progress
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RSC Advances

Effects of GaxZn1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

Rui Li, ORCID logo ab   Chunyan Yu,*ab   Hailiang Dong,ab   Wei Jia,ab   Tianbao Li,ab   Zhuxia Zhang ORCID logo ab  and  Bingshe Xuab  

* Corresponding authors

a Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
E-mail: yuchunyan75@163.com

b Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, China

Abstract

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Graphical abstract: Effects of GaxZn1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

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Article information

DOI
https://doi.org/10.1039/C7RA09250D
Article type
Paper
Submitted
22 Aug 2017
Accepted
05 Oct 2017
First published
25 Oct 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 49613-49617

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Effects of GaxZn1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

R. Li, C. Yu, H. Dong, W. Jia, T. Li, Z. Zhang and B. Xu, RSC Adv., 2017, 7, 49613 DOI: 10.1039/C7RA09250D

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