Issue 69, 2017, Issue in Progress

Nucleation and growth of H blisters in stacking fault on B2–FeAl {100} planes

Abstract

In the present work, the H accumulating behaviors at the stacking fault (SF) on {100} planes in B2–FeAl are studied by first-principles calculations. It is concluded that the SF on B2–FeAl {100} planes can trap H atoms, which serve as nucleation sites for H bubbles. When the areal density (the number of H atoms per the cross-sectional area of the SF) of the trapped H is as high as 5.9 × 1015 atoms per cm2, hydrogen recombines into molecules. With further increasing trapped H atoms, H bubbles grow gradually, yielding a hydrogen pressure of 3.4 GPa and strikingly elongating Al–Al bonds near the SF by 70% which implies the initiation of a crack, and eventually leads to a macroscopic fracture and crack of {100} type observed experimentally with the build-up of high pressures of hydrogen gases. This provides theoretical evidence for a HE mechanism of hydrogen blisters in iron aluminides.

Graphical abstract: Nucleation and growth of H blisters in stacking fault on B2–FeAl {100} planes

Article information

Article type
Paper
Submitted
29 Jul 2017
Accepted
06 Sep 2017
First published
11 Sep 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 43933-43937

Nucleation and growth of H blisters in stacking fault on B2–FeAl {100} planes

G. Zhang, F. Yang, M. Hu, L. Liu, Z. Luo and T. Tang, RSC Adv., 2017, 7, 43933 DOI: 10.1039/C7RA08368H

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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