Issue 63, 2017, Issue in Progress

Simultaneously enhanced Jsc and FF by employing two solution-processed interfacial layers for inverted planar perovskite solar cells

Abstract

Interface engineering has been proved to be a practical strategy to enhance power conversion efficiency (PCE) and stability of perovskite solar cells. Recently approaches involving ultra-thin layer deposition and vacuum-processing, while improving PCE, increase the processing complexity, and thus the overall cost. In this paper, we demonstrate a high-efficiency inverted planar perovskite solar cell, obtained with a simple wet-chemistry based, room-temperature, and cost-effective process, which synthesizes two interfacial layers: solution processed molybdenum oxide (named s-MoOx) for anode and titanium(IV) oxide bis(2,4-pentanedionate) (TOPD) for cathode buffer layers. Steady-state photoluminescence (PL), time resolved photoluminescence (TRPL) and electrochemical impedance spectroscopy (EIS) are conducted to characterize the charge transport properties, confirming an enhanced charge extraction efficiency and a suppressed charge recombination. In addition, the introduction of the interfacial layers facilities formation of an ohmic contact with the metal electrode, reducing the charge transfer resistance and increasing the FF to as high as 80.7%. The optimized solar cells achieve the best PCE of 16.04% which far exceeds the PCE of devices without these interfacial layers (PCE = 11.2%).

Graphical abstract: Simultaneously enhanced Jsc and FF by employing two solution-processed interfacial layers for inverted planar perovskite solar cells

Supplementary files

Article information

Article type
Paper
Submitted
07 Jul 2017
Accepted
08 Aug 2017
First published
14 Aug 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 39523-39529

Simultaneously enhanced Jsc and FF by employing two solution-processed interfacial layers for inverted planar perovskite solar cells

W. Zhang, Y. Ding, Y. Jiang, M. Zheng, S. Wu, X. Lu, M. Zeng, X. Gao, Q. Wang, G. Zhou, J. Liu, K. Kempa and J. Gao, RSC Adv., 2017, 7, 39523 DOI: 10.1039/C7RA07475A

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