Issue 59, 2017, Issue in Progress

Fabrication of p-ZnO:Na/n-ZnO:Na homojunction by surface pulsed laser irradiation

Abstract

An ingenious method of preparation of ZnO homojunctions for on-chip integration purposes is proposed, by local multiple pulse laser irradiating (MPLI) ZnO:Na film (NZO). The importance of this method lies in realization of p- and n-ZnO using only one kind of dopant (Na element) with a single layer of NZO film. The p-NZO as prepared by pulsed laser deposition (PLD) easily changes to n type after a couple of hours. However, more than ∼150 times MPLI with laser fluence of 60 mJ cm−2 can be used to efficiently control the Na dopants to occupy the substitutional (NaZn) sites to realize a more stable p-NZO. The low temperature (6 K) PL spectra of the p-NZO at excitation power of 6 mW and the first principle calculation show that the acceptor energy level is ∼161 meV. The current–voltage (IV) curve of the p–n NZO homojunction fabricated by local MPLI shows good rectifying behavior, with turn on voltage at ∼2.47 V under forward bias voltage and reverse breakdown voltage bias ∼11.22 V. This convenient p–n junction technique could be used to simplify and improve controllability and accuracy of fabrication of microchip electronic devices.

Graphical abstract: Fabrication of p-ZnO:Na/n-ZnO:Na homojunction by surface pulsed laser irradiation

Article information

Article type
Paper
Submitted
17 May 2017
Accepted
17 Jul 2017
First published
27 Jul 2017
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2017,7, 37296-37301

Fabrication of p-ZnO:Na/n-ZnO:Na homojunction by surface pulsed laser irradiation

X. Yang, X. Xu, F. Liu, L. Zhang, Z. Ji, Q. Chen and B. Cao, RSC Adv., 2017, 7, 37296 DOI: 10.1039/C7RA05574A

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