Issue 45, 2017

Investigation of the hole transport characterization and mechanisms in co-evaporated organic semiconductor mixtures

Abstract

The hole transport characteristics in small molecule semiconductor mixtures of HAT-CN : NPB, HAT-CN : TAPC and HAT-CN : CBP in the ratio of 2 : 1 have been investigated by admittance spectroscopy measurements. It is found that the hole mobility (10−5–10−4 cm2 V−1 s−1) variation with electric field in HAT-CN : NPB is the same as that in HAT-CN : TAPC. The hole transport in HAT-CN : CBP is space-charge-limited current (SCLC) with exponential distribution traps, different from SCLC with free trap distributions of HAT-CN : NPB and HAT-CN : TAPC mixtures. The hole mobility in the HAT-CN : CBP mixture is obtained as 10−7–10−5 cm2 V−1 s−1, which is one or two orders of magnitude lower than those of the other two mixtures. It can be seen that the mobility exhibits strong field-dependence in low electric field region. The mobility slightly increases as the electric field increases and almost saturates in high electric field region. It is shown that the trapping effect leads to the much lower hole mobility. The hole transport mechanisms in the three mixtures have been further studied through energy level analysis and atomic force microscopy.

Graphical abstract: Investigation of the hole transport characterization and mechanisms in co-evaporated organic semiconductor mixtures

Article information

Article type
Paper
Submitted
07 May 2017
Accepted
25 May 2017
First published
30 May 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 28494-28498

Investigation of the hole transport characterization and mechanisms in co-evaporated organic semiconductor mixtures

Y. Wang, Q. Liang, J. Huang, D. Ma and Y. Jiao, RSC Adv., 2017, 7, 28494 DOI: 10.1039/C7RA05131J

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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