Atomic structure, electronic properties and generalized stacking fault energy of diamond/c-BN multilayer

Abstract

The atomic structures, electronic properties and generalized stacking fault (GSF) energies of the diamond/c-BN multilayer are investigated systematically with first-principles calculations. A total of twelve interfacial structures are considered, encompassing two c-BN terminations, each of which involves two diamond terminations and three stacking sequences. We identify two stable interfacial structures, where the stacking sequence near the interface is identical to that in bulk diamond, implying a smooth transition across the interface. By using several analytical techniques, we find that the interfacial bonds are primarily of a mixed covalent-ionic nature, and the covalency stems from the sp³ hybridization between interfacial C sp states and B sp states. The shapes of the GSF energy curves for the interfaces are similar to those for bulk diamond and c-BN, albeit that the unstable GSF energies for the former are smaller than those for the latter. The GSF energies of the slip planes near the interface alter remarkably due to the interfacial effect, meaning that they are dependent on the slip systems.