Dual-wavelength synchronously mode-locked Nd:LaGGG laser operating at 1.3 μm with a SESAM

Xiaoli Sun; Jingliang He; Zhitai Jia; Jian Ning; Ruwei Zhao; Xiancui Su; Yiran Wang; Baitao Zhang; Kejian Yang; Shuang Zhao

doi:10.1039/C7RA04768A

Dual-wavelength synchronously mode-locked Nd:LaGGG laser operating at 1.3 μm with a SESAM

Xiaoli Sun,

^a Jingliang He,*^a Zhitai Jia,

*^a Jian Ning,^a Ruwei Zhao,^a Xiancui Su,^a Yiran Wang,^a Baitao Zhang,^a Kejian Yang^b and Shuang Zhao^c

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* Corresponding authors

^a The State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
E-mail: jlhe@sdu.edu.cn, z.jia@sdu.edu.cn

^b The School of Information Science and Engineering, Shandong University, Jinan 250100, China

^c The College of Physical Science and Technology, Jinan University, Jinan 250022, China

Abstract

We have demonstrated a diode-end-pumped synchronously dual-wavelength mode-locked Nd³⁺:(La_0.1Gd_0.9)₃Ga₅O₁₂ (Nd:LaGGG) laser operating at 1.3 μm with a semiconductor saturable absorber mirror (SESAM) for the first time to our knowledge. The mode-locked laser emitted an average output power of 530 mW with two wavelengths centered at 1331.2 and 1336.5 nm. The pulse duration and repetition rate were 17 ps and 37.6 MHz, respectively. A frequency beat signal with respect to two stationary wave interference patterns of 0.876 THz was observed from the autocorrelation trace.

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Dual-wavelength synchronously mode-locked Nd:LaGGG laser operating at 1.3 μm with a SESAM

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Dual-wavelength synchronously mode-locked Nd:LaGGG laser operating at 1.3 μm with a SESAM

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