Issue 41, 2017, Issue in Progress

Modelling of an equivalent circuit for Cu2ZnSnS4- and Cu2ZnSnSe4-based thin film solar cells

Abstract

The internal resistance and quality of the interface in Cu2ZnSn(S, Se)4 (CZT(S, Se)) solar cells were investigated using electrochemical impedance spectroscopy (EIS). We developed an equivalent circuit of the CZT(S, Se) solar cell involving the contact and material resistances Rbulk, two parallel resistances, and a ‘capacitance-like element’ called a constant phase element (CPE) around the CZT(S, Se)/CdS heterojunction and Mo–Mo(S, Se)2/CZT(S, Se) back-contact interfaces. Using the EIS method, the states of Mo(S, Se) and the CZT(S, Se) layer could be digitised non-destructively. This result can provide guidelines for improving the performance of CZT(S, Se) solar cells or any semiconductor device.

Graphical abstract: Modelling of an equivalent circuit for Cu2ZnSnS4- and Cu2ZnSnSe4-based thin film solar cells

Supplementary files

Article information

Article type
Paper
Submitted
23 Feb 2017
Accepted
05 May 2017
First published
11 May 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 25347-25352

Modelling of an equivalent circuit for Cu2ZnSnS4- and Cu2ZnSnSe4-based thin film solar cells

N. Shibayama, Y. Zhang, T. Satake and M. Sugiyama, RSC Adv., 2017, 7, 25347 DOI: 10.1039/C7RA02274C

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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