Realization of uniaxially strained, rolled-up monolayer CVD graphene on a Si platform via heteroepitaxial InGaAs/GaAs bilayers

Abstract

III–V semiconductor/graphene tubular structures with diameters of 4.5–5.4 μm have been fabricated on a silicon platform by rolling up monolayer CVD graphene together with heteroepitaxial InGaAs/GaAs bilayers. Scanning electron microscopy (SEM) reveals that transferred graphene adheres to the wall of the Si-based InGaAs/GaAs microtube. Micro-Raman spectroscopy measurements show remarkable redshifts of the G and 2D bands of graphene after planar graphene totally rolls up, reflecting that rolled-up graphene is under uniaxial tensile strain and the strain originates from the rolled-up InGaAs/GaAs microtube. We also fabricated GaAs-based III–V semiconductor/graphene tubular structures with diameters of 3.7 and 4.7 μm, respectively, thus finding an approach to graphene strain engineering (i.e., the Raman redshift and tensile strain of rolled-up graphene increase with the decrement of microtube diameter). Obviously, assembling strained graphene with III–V semiconductors in rolled-up form on a Si platform will bring about a variety of Si-based electronic and optical applications in the future.