Issue 17, 2017, Issue in Progress

Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

Abstract

The vertical Al2Se3/MoSe2 heterojunction on sapphire was first fabricated via an ion beam-assisted process. The MoSe2 was formed via Mo selenization, while Al2Se3 was formed via Se substitution for O in sapphire. The applications of this heterojunction will be developed in the future.

Graphical abstract: Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

Supplementary files

Article information

Article type
Paper
Submitted
16 Dec 2016
Accepted
20 Jan 2017
First published
06 Feb 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 10154-10157

Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

H. Tsai, J. Liou, Y. Wang, C. Chen, Y. Chueh, C. Hsiao, H. Ouyang, W. Woon and J. Liang, RSC Adv., 2017, 7, 10154 DOI: 10.1039/C6RA28273C

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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