Issue 9, 2017

Design and characterization of methoxy modified organic semiconductors based on phenyl[1]benzothieno[3,2-b][1]benzothiophene

Abstract

Two environmentally and thermally stable [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives, BOP-BTBT and DBOP-BTBT are successfully synthesized and analyzed as active layers in organic thin film transistors. The effects of methoxy on BTBT based OTFT materials are reported for the first time. The experimental results show an excellent optimization influence of methoxy group on the OTFT performance with an improved hole transport mobility up to 0.63 cm2 V−1 s−1 (BOP-BTBT) and 3.57 cm2 V−1 s−1 (DBOP-BTBT). Meantime the mono- and bis-substituted derivatives are compared in terms of their physical properties and device performance. We find that the threshold voltage decreases when more methoxy groups are introduced.

Graphical abstract: Design and characterization of methoxy modified organic semiconductors based on phenyl[1]benzothieno[3,2-b][1]benzothiophene

Supplementary files

Article information

Article type
Communication
Submitted
12 Dec 2016
Accepted
03 Jan 2017
First published
17 Jan 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 5514-5518

Design and characterization of methoxy modified organic semiconductors based on phenyl[1]benzothieno[3,2-b][1]benzothiophene

C. Yao, X. Chen, Y. He, Y. Guo, I. Murtaza and H. Meng, RSC Adv., 2017, 7, 5514 DOI: 10.1039/C6RA28074A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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