Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

Ja-Young Seo; Jaeho Choi; Hui-Seon Kim; Jaegyeom Kim; June-Mo Yang; Can Cuhadar; Ji Su Han; Seung-Joo Kim; Donghwa Lee; Ho Won Jang; Nam-Gyu Park

doi:10.1039/C7NR90229H

Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

Ja-Young Seo,^a Jaeho Choi,^b Hui-Seon Kim,^c Jaegyeom Kim,^d June-Mo Yang,^a Can Cuhadar,^a Ji Su Han,^b Seung-Joo Kim,^d Donghwa Lee,

^e Ho Won Jang

*^b and Nam-Gyu Park

*^a

Author affiliations

* Corresponding authors

^a School of Chemical Engineering, Energy Frontier Laboratory, Sungkyunkwan University, Suwon 16419, Korea
E-mail: npark@skku.edu

^b Department of Materials Science and Engineering, Research Center for Advanced Materials, Seoul National University, Seoul 08826, Korea
E-mail: hwjang@snu.ac.kr

^c Laboratory of Photomolecular Science, Institute of Chemical Sciences and Engineering, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland

^d Department of Chemistry, Ajou University, Suwon 16499, Korea

^e Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea

Abstract

Correction for ‘Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite’ by Ja-Young Seo, et al., Nanoscale, 2017, DOI: 10.1039/c7nr05582j.

Nanoscale

Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

Abstract

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Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

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