Issue 43, 2017

Revisit of the Saito–Dresselhaus–Dresselhaus C2 ingestion model: on the mechanism of atomic-carbon-participated fullerene growth

Abstract

We introduce a mechanistic study based on a controversial fullerene bottom-up growth model proposed by R. Saito, G. Dresselhaus, and M. S. Dresselhaus. The so-called SDD C2 addition model has been dismissed as chemically inadmissible but here we prove that it is feasible via successive atomic-carbon-participated addition and migration reactions. Kinetic calculations on the formation of isolated pentagon rule (IPR)-obeying C70 and Y3N@C80 are carried out by employing the SDD model for the first time. A stepwise mechanism is proposed with a considerably low barrier of ca. 2 eV which is about 3 eV lower than a conventional isomerization-containing fullerene growth pathway.

Graphical abstract: Revisit of the Saito–Dresselhaus–Dresselhaus C2 ingestion model: on the mechanism of atomic-carbon-participated fullerene growth

Supplementary files

Article information

Article type
Paper
Submitted
09 Jul 2017
Accepted
27 Sep 2017
First published
29 Sep 2017

Nanoscale, 2017,9, 16742-16748

Revisit of the Saito–Dresselhaus–Dresselhaus C2 ingestion model: on the mechanism of atomic-carbon-participated fullerene growth

W. Wang, J. Dang, X. Zhao and S. Nagase, Nanoscale, 2017, 9, 16742 DOI: 10.1039/C7NR04966H

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