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Issue 2, 2017
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Single-electron tunneling through an individual arsenic dopant in silicon

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Abstract

We report the single-electron tunneling behaviour of a silicon nanobridge where the effective island is a single As dopant atom. The device is a gated silicon nanobridge with a thickness and width of ∼20 nm, fabricated from a commercially available silicon-on-insulator wafer, which was first doped with As atoms and then patterned using a unique CMOS-compatible technique. Transport measurements reveal characteristic Coulomb diamonds whose size decreases with gate voltage. Such a dependence indicates that the island of the single-electron transistor created is an individual arsenic dopant atom embedded in the silicon lattice between the source and drain electrodes, and furthermore, can be explained by the increase of the localisation region of the electron wavefunction when the higher energy levels of the dopant As atom become occupied. The charge stability diagram of the device shows features which can be attributed to adjacent dopants, localised in the nanobridge, acting as charge traps. From the measured device transport, we have evaluated the tunnel barrier properties and obtained characteristic device capacitances. The fabrication, control and understanding of such “single-atom” devices marks a further step towards the implementation of single-atom electronics.

Graphical abstract: Single-electron tunneling through an individual arsenic dopant in silicon

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Publication details

The article was received on 13 Sep 2016, accepted on 23 Nov 2016 and first published on 24 Nov 2016


Article type: Paper
DOI: 10.1039/C6NR07258E
Citation: Nanoscale, 2017,9, 613-620
  • Open access: Creative Commons BY license
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    Single-electron tunneling through an individual arsenic dopant in silicon

    V. V. Shorokhov, D. E. Presnov, S. V. Amitonov, Yu. A. Pashkin and V. A. Krupenin, Nanoscale, 2017, 9, 613
    DOI: 10.1039/C6NR07258E

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