Jump to main content
Jump to site search

Issue 9, 2017
Previous Article Next Article

Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration

Author affiliations


Metal-oxide-semiconductor (MOS) based gas sensors have been considered a promising candidate for gas detection over the past few years. However, the sensing properties of MOS-based gas sensors also need to be further enhanced to satisfy the higher requirements for specific applications, such as medical diagnosis based on human breath, gas detection in harsh environments, etc. In these fields, excellent selectivity, low power consumption, a fast response/recovery rate, low humidity dependence and a low limit of detection concentration should be fulfilled simultaneously, which pose great challenges to the MOS-based gas sensors. Recently, in order to improve the sensing performances of MOS-based gas sensors, more and more researchers have carried out extensive research from theory to practice. For a similar purpose, on the basis of the whole fabrication process of gas sensors, this review gives a presentation of the important role of screening and the recent developments in high throughput screening. Subsequently, together with the sensing mechanism, the factors influencing the sensing properties of MOSs involved in material preparation processes were also discussed in detail. It was concluded that the sensing properties of MOSs not only depend on the morphological structure (particle size, morphology, pore size, etc.), but also rely on the defect structure and heterointerface structure (grain boundaries, heterointerfaces, defect concentrations, etc.). Therefore, the material-sensor integration was also introduced to maintain the structural stability in the sensor fabrication process, ensuring the sensing stability of MOS-based gas sensors. Finally, the perspectives of the MOS-based gas sensors in the aspects of fundamental research and the improvements in the sensing properties are pointed out.

Graphical abstract: Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration

Back to tab navigation

Publication details

The article was received on 15 Nov 2016, accepted on 24 Jan 2017 and first published on 24 Jan 2017

Article type: Perspective
DOI: 10.1039/C6CP07799D
Citation: Phys. Chem. Chem. Phys., 2017,19, 6313-6329
  •   Request permissions

    Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration

    J. Zhang, Z. Qin, D. Zeng and C. Xie, Phys. Chem. Chem. Phys., 2017, 19, 6313
    DOI: 10.1039/C6CP07799D

Search articles by author