Issue 5, 2017

Ten-gram scale SiC@SiO2 nanowires: high-yield synthesis towards industrialization, in situ growth mechanism and their peculiar photoluminescence and electromagnetic wave absorption properties

Abstract

SiC@SiO2 nanowires, as a functional nanocomposite, have attracted widespread attention due to their fascinating performance and broad application prospect. However, the low-cost, high yield preparation of large-scale SiC@SiO2 nanowires is still a bottleneck, which hinders their industrial application. Herein, a carbothermal reduction strategy has been developed to synthesize SiC@SiO2 nanowires, which breaks through the handicap of the traditional growth pattern that uses the aid of a substrate. Systematic characterization results illustrate that the yield of the as-obtained products greatly depends on the heating rate, and ten-gram scale SiC@SiO2 nanowires (∼27.2 g) composed of a cubic β-SiC core and homogeneous amorphous SiO2 coating are achieved under the optimum process parameters. The in situ mechanisms of expansion-insertion-growth and inhibition of expansion-package-obstruction are proposed to rationally interpret the growth process of SiC@SiO2 nanowires and the effect of various heating rates, respectively. Furthermore, the SiC@SiO2 nanowires display violet-blue photoluminescence and electromagnetic wave absorption properties. This study not only provides some beneficial suggestions for the commercial production of SiC@SiO2 nanowires, but also reveals promising applications of SiC@SiO2 nanowires in the optical and electromagnetic shielding fields. Moreover, the developed novel in situ growth mechanism enriches the growth theory of one-dimension nanomaterials and offers inspiration for their industrial-scale production.

Graphical abstract: Ten-gram scale SiC@SiO2 nanowires: high-yield synthesis towards industrialization, in situ growth mechanism and their peculiar photoluminescence and electromagnetic wave absorption properties

Article information

Article type
Paper
Submitted
01 Nov 2016
Accepted
03 Jan 2017
First published
03 Jan 2017

Phys. Chem. Chem. Phys., 2017,19, 3948-3954

Ten-gram scale SiC@SiO2 nanowires: high-yield synthesis towards industrialization, in situ growth mechanism and their peculiar photoluminescence and electromagnetic wave absorption properties

Z. J. Li, H. Y. Yu, G. Y. Song, J. Zhao, H. Zhang, M. Zhang, A. L. Meng and Q. D. Li, Phys. Chem. Chem. Phys., 2017, 19, 3948 DOI: 10.1039/C6CP07457J

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